155N3H6 データシートの表示（PDF） - STMicroelectronics

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155N3H6

N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STB155N3H6

STD155N3H6

N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK

STripFET™ VI DeepGATE™ Power MOSFET

Features

Order codes

STB155N3H6

STD155N3H6

VDSS

30 V

30 V

RDS(on) max

< 3 mΩ

< 3 mΩ

ID

80 A (1)

80 A (1)

1. Limited by wire bonding

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

Application

■ Switching applications

■ Automotive

Description

These devices are 30 V N-channel Power

MOSFETs realized using ST`s proprietary

STripFET™ VI technology. The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

3

1

DPAK

3

1

D²PAK

Figure 1. Internal schematic diagram

D (TAB or 2)

G(1)

Table 1. Device summary

Order codes

STB155N3H6

STD155N3H6

Marking

155N3H6

S(3)

AM01474v1

Package

D²PAK

DPAK

Packaging

Tape and reel

May 2011

Doc ID 018793 Rev 2

1/

www.st.com

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