R5F10367DNA-U0 データシートの表示（PDF） - Renesas Electronics

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R5F10367DNA-U0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)

(4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (−) =

AVREFM (ADREFM = 1), target pin: ANI0, ANI2, ANI3, and ANI16 to ANI22

(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGR Note 3, Reference voltage (−) =

AVREFM Note 4= 0 V, HS (high-speed main) mode)

Parameter

Symbol

Conditions

MIN.

TYP. MAX.

Unit

Resolution

RES

8

bit

Conversion time

tCONV

8-bit resolution

17

39

μs

Zero-scale errorNotes 1, 2

EZS

8-bit resolution

±0.60 %FSR

Integral linearity errorNote 1

ILE

8-bit resolution

±2.0

LSB

Differential linearity error Note 1

DLE

8-bit resolution

±1.0

LSB

Analog input voltage

VAIN

0

VBGR Note 3

V

Notes 1. Excludes quantization error (±1/2 LSB).

2. This value is indicated as a ratio (%FSR) to the full-scale value.

3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.

4. When reference voltage (−) = VSS, the MAX. values are as follows.

Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (−) = AVREFM.

Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (−) = AVREFM.

Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (−) = AVREFM.

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 98 of 106

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