STM32L151VBH6 データシートの表示（PDF） - STMicroelectronics

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STM32L151VBH6

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

Electrical characteristics

STM32L151x6/8/B STM32L152x6/8/B

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Symbol

SEMI

Table 38. EMI characteristics

Max vs. frequency range

Parameter

Conditions

Monitored

frequency band

4 MHz

voltage

Range 3

16 MHz

voltage

Range 2

32 MHz

voltage

Range 1

VDD = 3.3 V,

0.1 to 30 MHz

3

-6

-5

TA = 25 °C,

30 to 130 MHz

18

4

-7

Peak level LQFP100 package

compliant with IEC 130 MHz to 1GHz

15

5

-7

61967-2

SAE EMI Level

2.5

2

1

Unit

dBµV

-

6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Symbol

Table 39. ESD absolute maximum ratings

Ratings

Conditions

Packages Class

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA = +25 °C, conforming to

JESD22-A114

All

2

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

TA = +25 °C, conforming to

JESD22-C101

All

III

1. Guaranteed by characterization results.

Maximum

value(1)

2000

500

Unit

V

80/133

DocID17659 Rev 12

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