STM32F301R8U7TR(2014) データシートの表示（PDF） - STMicroelectronics

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STM32F301R8U7TR
(Rev.:2014)

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

STMicroelectronics 

Electrical characteristics

STM32F301x6 STM32F301x8

6.3.8

Internal clock source characteristics

The parameters given in Table 43 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 23.

High-speed internal (HSI) RC oscillator

Table 43. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions Min Typ

fHSI

Frequency

-

-

8

TRIM HSI user trimming step

-

-

-

DuCy(HSI) Duty cycle

-

45(2)

-

TA = -40 to

105°C

-2.8(3)

-

TA = -10 to 85°C -1.9(3)

-

ACCHSI Accuracy of the HSI oscillator TA = 0 to 85°C -1.9(3)

-

TA = 0 to 70°C -1.3(3)

-

TA = 0 to 55°C

-1(3)

-

TA = 25°C(4)

-1

-

tsu(HSI) HSI oscillator startup time

-

1(2)

-

IDDA(HSI)

HSI oscillator power

consumption

-

-

80

1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2. Guaranteed by design, not tested in production.

3. Data based on characterization results, not tested in production.

4. Factory calibrated, parts not soldered.

Max

-

1(2)

55(2)

3.8(3)

2.3(3)

2(3)

2(3)

2(3)

1

2(2)

100(2)

Unit

MHz

%

%

%

μs

μA

Figure 18. HSI oscillator accuracy characterization results for soldered parts



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