2N6248 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6248 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-
: hFE= 20-100(Min)@IC = -5A
·Low Saturation Voltage-
: VCE(sat)= -1.3V(Max)@ IC = -5A
APPLICATIONS
·Designed for general-purpose switching and linear amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCER
Collector-Emitter Voltage RBE= 100Ω
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation @TC=25℃ 125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.4 ℃/W
SPTECH website：www.superic-tech.com
2N6248
1
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