STS3DNE60L データシートの表示（PDF） - STMicroelectronics
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STS3DNE60L Datasheet PDF : 5 Pages
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STS3DNE60L
N - CHANNEL 60V - 0.065Ω - 3A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS3DNE60L
60 V < 0.08 Ω
3A
s TYPICAL RDS(on) = 0.065 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
Single Operation
Drain Current (continuous) at Tc = 100 oC
Single Operation
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC Dual Operation
Total Dissipation at Tc = 25 oC Sinlge Operation
(•) Pulse width limited by safe operating area
May 1999
Value
60
60
± 20
3
1.9
12
2
1.6
Unit
V
V
V
A
A
A
W
W
1/5
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