STM32F205VE 데이터 시트보기 (PDF) - STMicroelectronics
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STM32F205VE Datasheet PDF : 177 Pages
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STM32F20xxx
Electrical characteristics
Table 22. Typical and maximum current consumptions in Standby mode
Typ
Max(1)
Symbol Parameter
Conditions
TA = 25 °C
TA = 85 °C TA = 105 °C Unit
VDD = VDD= VDD =
1.8 V 2.4 V 3.3 V
VDD = 3.6 V
Backup SRAM ON, low-speed
oscillator and RTC ON
3.0
3.4
4.0
Supply current Backup SRAM OFF, low-
IDD_STBY in Standby
speed oscillator and RTC ON
2.4
2.7
3.3
mode
Backup SRAM ON, RTC OFF 2.4 2.6 3.0
15.1
12.4
12.5
Backup SRAM OFF, RTC OFF 1.7 1.9 2.2
9.8
25.8
20.5
µA
24.8
19.2
1. Based on characterization, not tested in production.
Table 23. Typical and maximum current consumptions in VBAT mode
Typ
Max(1)
Symbol Parameter
Conditions
TA = 25 °C
TA = 85 °C
TA =
105 °C
Unit
VDD = VDD= VDD =
1.8 V 2.4 V 3.3 V
VDD = 3.6 V
Backup SRAM ON, low-speed
oscillator and RTC ON
1.29 1.42 1.68
12
Backup
Backup SRAM OFF, low-speed
IDD_VBAT domain supply oscillator and RTC ON
0.62 0.73 0.96
8
current
Backup SRAM ON, RTC OFF
0.79 0.81 0.86
9
Backup SRAM OFF, RTC OFF 0.10 0.10 0.10
5
19
10
µA
16
7
1. Based on characterization, not tested in production.
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 24. The MCU is placed
under the following conditions:
Doc ID 15818 Rev 9
77/177
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