STM32F407VEH6 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F407VEH6

ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

STM32F405xx, STM32F407xx

Electrical characteristics

Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

-

1.5

ns

th(BL_NOE)

FSMC_BL hold time after FSMC_NOE high

0

-

ns

tsu(Data_NE) Data to FSMC_NEx high setup time

THCLK+4

-

ns

tsu(Data_NOE) Data to FSMC_NOEx high setup time

THCLK+4

-

ns

th(Data_NOE) Data hold time after FSMC_NOE high

0

-

ns

th(Data_NE)

Data hold time after FSMC_NEx high

0

-

ns

tv(NADV_NE) FSMC_NEx low to FSMC_NADV low

-

2

ns

tw(NADV)

FSMC_NADV low time

-

THCLK

ns

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

FSMC_NEx

tw(NE)

FSMC_NOE

FSMC_NWE

FSMC_A[25:0]

FSMC_NBL[1:0]

FSMC_D[15:0]

FSMC_NADV(1)

tv(NWE_NE)

tw(NWE)

tv(A_NE)

tv(BL_NE)

tv(Data_NE)

t v(NADV_NE)

tw(NADV)

th(A_NWE)

Address

th(BL_NWE)

NBL

th(Data_NWE)

Data

t h(NE_NWE)

ai14990

1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol

Parameter

Min

Max Unit

tw(NE)

tv(NWE_NE)

tw(NWE)

th(NE_NWE)

tv(A_NE)

FSMC_NE low time

FSMC_NEx low to FSMC_NWE low

FSMC_NWE low time

FSMC_NWE high to FSMC_NE high hold time

FSMC_NEx low to FSMC_A valid

3THCLK 3THCLK+ 4 ns

THCLK–0.5 THCLK+0.5 ns

THCLK–1

THCLK+2 ns

THCLK–1

-

ns

-

0

ns

DocID022152 Rev 4

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