STM32F407RGH7 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F407RGH7

ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

STMicroelectronics 

Electrical characteristics

STM32F405xx, STM32F407xx

Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

th(A_NWE) Address hold time after FSMC_NWE high

THCLK– 2

-

ns

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

-

1.5

ns

th(BL_NWE) FSMC_BL hold time after FSMC_NWE high

THCLK– 1

-

ns

tv(Data_NE) Data to FSMC_NEx low to Data valid

-

THCLK+3 ns

th(Data_NWE) Data hold time after FSMC_NWE high

THCLK–1

-

ns

tv(NADV_NE) FSMC_NEx low to FSMC_NADV low

-

2

ns

tw(NADV)

FSMC_NADV low time

-

THCLK+0.5 ns

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)

FSMC_NE

tv(NOE_NE)

t h(NE_NOE)

FSMC_NOE

FSMC_NWE

FSMC_A[25:16]

FSMC_NBL[1:0]

FSMC_AD[15:0]

t w(NOE)

tv(A_NE)

tv(BL_NE)

Address

NBL

th(A_NOE)

th(BL_NOE)

t v(A_NE)

Address

t v(NADV_NE)

tw(NADV)

tsu(Data_NE)

tsu(Data_NOE)

Data

th(AD_NADV)

th(Data_NE)

th(Data_NOE)

FSMC_NADV

ai14892b

Table 77. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol

Parameter

Min

Max

tw(NE)

tv(NOE_NE)

tw(NOE)

th(NE_NOE)

tv(A_NE)

FSMC_NE low time

FSMC_NEx low to FSMC_NOE low

FSMC_NOE low time

FSMC_NOE high to FSMC_NE high hold time

FSMC_NEx low to FSMC_A valid

3THCLK–1

2THCLK–0.5

THCLK–1

0

-

3THCLK+1

2THCLK+0.5

THCLK+1

-

3

Unit

ns

ns

ns

ns

ns

140/185

DocID022152 Rev 4

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