M25P40SVMN6TP/4 데이터 시트보기 (PDF) - Numonyx -> Micron

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M25P40SVMN6TP/4

4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface

Numonyx -> Micron 

M25P40

DC and AC parameters

Table 17.

Instruction times, process technology T7Y(1)

Test conditions specified in Table 10 and Table 18

Symbol Alt.

Parameter

Min. Typ. Max. Unit

tW

tPP (2)

Write Status Register cycle time

Page Program cycle time (256 bytes)

Page Program cycle time (n bytes)

5

15

ms

1.4

0.4+n*1/ 5

ms

256(2)

tSE

Sector Erase cycle time

1

3

s

tBE

Bulk Erase cycle time

4.5

10

s

1. Technology T7Y devices are identified by process identification digit "X" in the device marking.

2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤

256)

Table 18. AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

CL Load capacitance

Input rise and fall times

30

pF

5

ns

Input pulse voltages

Input timing reference voltages

Output timing reference voltages

0.2VCC to 0.8VCC

V

0.3VCC to 0.7VCC

V

VCC / 2

V

1. Output Hi-Z is defined as the point where data out is no longer driven.

Figure 21. AC measurement I/O waveform

Input Levels

0.8VCC

0.2VCC

Input and Output

Timing Reference Levels

0.7VCC

0.5VCC

0.3VCC

AI07455

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