M28F420-120M3TR 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

M28F420-120M3TR

4 Megabit (x8 or x16, Block Erase) FLASH MEMORY

STMicroelectronics 

Figure 12. Erase Flow-chart and Pseudo Code

M28F410, M28F420

Start

Write 20h

Command

Write Block Address

& 0D0h Command

Suspend

Loop

Read Status

Register

NO

b7 = 1

YES

NO

b3 = 0

YES

NO

b4, b5 = 1

YES

NO

b5 = 0

YES

End

NO

Suspend

YES

VPP Low

Error (1)

Command

Sequence Error

Erase

Error (1)

EE instruction:

– write 20h command

– write Block Address

(A12-A17) & command 0D0h

(memory enters read status

state after the EE instruction)

do:

– read status register

(E or G must be toggled)

if EE instruction given execute

suspend erase loop

while b7 = 1

If b3 = 0, VPP low error:

– error handler

If b4, b5 = 0, Command Sequence error:

– error handler

If b5 = 0, Erase error:

– error handler

AI01279

Note: 1. If VPP Low or Erase Error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations.

31/38

Share Link: