PIC18F45J50-I/SOSQTP 데이터 시트보기 (PDF) - Microchip Technology

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PIC18F45J50-I/SOSQTP

28/44-Pin, Low-Power, High-Performance USB Microcontrollers with nanoWatt XLP Technology

Microchip Technology 

PIC18F46J50 FAMILY

30.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings(†)

Ambient temperature under bias.............................................................................................................-40°C to +125°C

Storage temperature .............................................................................................................................. -65°C to +150°C

Voltage on any digital only I/O pin or MCLR with respect to VSS (when VDD  2.0V) .................................. -0.3V to 6.0V

Voltage on any digital only I/O pin or MCLR with respect to VSS (when VDD < 2.0V) ..................... -0.3V to (VDD + 4.0V)

Voltage on any combined digital and analog pin with respect to VSS (except VDD)........................ -0.3V to (VDD + 0.3V)

Voltage on VDDCORE with respect to VSS................................................................................................... -0.3V to 2.75V

Voltage on VDD with respect to VSS ........................................................................................................... -0.3V to 4.0V

Voltage on VUSB with respect to VSS................................................................................................ (VDD – 0.3V) to 4.0V

Total power dissipation (Note 1) ...............................................................................................................................1.0W

Maximum current out of VSS pin ...........................................................................................................................300 mA

Maximum current into VDD pin ..............................................................................................................................250 mA

Maximum output current sunk by any PORTB, PORTC and RA6 I/O pin...............................................................25 mA

Maximum output current sunk by any PORTA (except RA6), PORTD and PORTE I/O pin......................................4 mA

Maximum output current sourced by any PORTB, PORTC and RA6 I/O pin .........................................................25 mA

Maximum output current sourced by any PORTA (except RA6), PORTD and PORTE I/O pin ................................4 mA

Maximum current sunk byall ports .......................................................................................................................200 mA

Maximum current sourced by all ports ..................................................................................................................200 mA

Note 1: Power dissipation is calculated as follows:

PDIS = VDD x {IDD –  IOH} +  {(VDD – VOH) x IOH} +  (VOL x IOL)

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

 2011 Microchip Technology Inc.

DS39931D-page 489

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