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STM32F030CC(2015) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F030CC Datasheet PDF : 96 Pages
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Electrical characteristics
STM32F030x4/6/8/C
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = -40 to 85 °C unless otherwise specified.
Symbol
Table 39. Flash memory characteristics
Parameter
Conditions
Min
Typ Max(1) Unit
tprog
tERASE
tME
IDD
16-bit programming time
Page erase time(2)
Mass erase time
Supply current
TA = -40 to +85 °C
TA = -40 to +85 °C
TA = -40 to +85 °C
Write mode
Erase mode
-
53.5
-
μs
-
30
-
ms
-
30
-
ms
-
-
10 mA
-
-
12 mA
Vprog Programming voltage
2.4
-
1. Guaranteed by design, not tested in production.
2. Page size is 1KB for STM32F030x4/6/8 devices and 2KB for STM32F030xC devices
3.6
V
Symbol
Table 40. Flash memory endurance and data retention
Parameter
Conditions
Min(1)
NEND Endurance
TA = -40 to +85 °C
1
tRET Data retention
1 kcycle(2) at TA = 85 °C
20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
Unit
kcycles
Years
6.3.11
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 41. They are based on the EMS levels and classes
defined in application note AN1709.
62/96
DocID024849 Rev 2

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