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STM32F030RCT6 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F030RCT6 Datasheet PDF : 91 Pages
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STM32F030x4/x6/x8/xC
Electrical characteristics
6.3.4
6.3.5
Table 23. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min Typ Max Unit
VPDRhyst PDR hysteresis
tRSTTEMPO(4) Reset temporization
-
-
40
-
mV
-
1.50 2.50 4.50 ms
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
3. Data based on characterization results, not tested in production.
4. Guaranteed by design, not tested in production.
Embedded reference voltage
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
Table 24. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT
Internal reference
voltage
-40°C < TA < +85°C
tSTART
ADC_IN17 buffer startup
time
-
ADC sampling time when
tS_vrefint reading the internal
-
reference voltage
ΔVREFINT
Internal reference
voltage spread over the
temperature range
VDDA = 3 V
TCoeff
Temperature coefficient
-
1. Guaranteed by design, not tested in production.
1.2 1.23 1.25
V
-
-
10(1)
µs
4 (1)
-
-
µs
-
-
10(1)
mV
-100(1) - 100(1) ppm/°C
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
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