STPS40L45CT 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40L45CT Datasheet PDF : 6 Pages
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STPS40L45CT/CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth(c)
Parameter
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.5
0.8
0.1
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage cur- Tj = 25°C
rent
Tj = 125°C
VR = VRRM
VF * Forward voltage
drop
Tj = 25°C
Tj = 125°C
IF = 20 A
IF = 20 A
Tj = 25°C
IF = 40 A
Tj = 125°C
IF = 40 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.0105 IF2(RMS)
Min. Typ. Max. Unit
0.6 mA
140 280 mA
0.53
V
0.42 0.49
0.69
0.6 0.7
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
PF(av)(W)
IF(av)(A)
16
22
14
δ = 0.1 δ = 0.2
δ = 0.5
20
δ = 0.05
18
12
16
Rth(j-a)=Rth(j-c)
10
14
8
δ=1
12
10
Rth(j-a)=15°C/W
6
8
4
T
6
T
2
IF(av) (A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24
4
2 δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100 125 150
2/6
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