STPS8H100FP(2006) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS8H100FP Datasheet PDF : 9 Pages
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Characteristics
STPS8H100
Figure 9.
Relative variation of thermal
Figure 10. Reverse leakage current versus
impedance junction to case versus
reverse voltage applied (typical
pulse duration (TO-220FPAC)
values)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
IR(µA)
5E+3
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12. Forward voltage drop versus
forward current (maximum values)
C(pF)
1000
500
F=1MHz
Tj=25°C
IFM(A)
50.0
10.0
Tj=125°C
Tj=25°C
1.0
200
100
1
VR(V)
10
VFM(V)
0.1
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under tab - Epoxy printed circuit
board FR4, ecu = 35 µm (D2PAK)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0 4 8 12 16 20 24 28 32 36 40
4/9
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