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STM8S105K6U3C 데이터 시트보기 (PDF) - STMicroelectronics

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STM8S105K6U3C Datasheet PDF : 127 Pages
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STM8S105xx
Electrical characteristics
Figure 23: Typical LSI accuracy vs VDD @ 4 temperatures
10.3.5
Memory characteristics
RAM and hardware registers
Table 36: RAM and hardware registers
Symbol Parameter
Conditions
VRM
Data retention mode(1)
Halt mode (or reset)
Min
Unit
VIT-max (2) V
(1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
refer to Operating conditions for the value of VIT-max
(2)Refer to the Operating conditions section for the value of VIT-max
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 125°C.
Table 37: Flash program memory/data EEPROM memory
Symbol Parameter
Conditions
Min(1) Typ Max Unit
VDD Operating voltage (all modes,
execution/write/erase)
fCPU ≤ 16 MHz 2.95
5.5 V
tprog Standard programming time
(including erase) for
byte/word/block (1 byte/4
bytes/128 bytes)
6 6.6 ms
DocID14771 Rev 9
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