STM32F091VCY6TR 데이터 시트보기 (PDF) - STMicroelectronics
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STM32F091VCY6TR
STMicroelectronics
STM32F091VCY6TR Datasheet PDF : 128 Pages
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STM32F091xB STM32F091xC
Electrical characteristics
Table 25. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
tVDD
tVDDA
VDD rise time rate
VDD fall time rate
VDDA rise time rate
VDDA fall time rate
0
∞
-
20
∞
0
∞
-
20
∞
Unit
µs/V
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 26 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
Table 26. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
VPOR/PDR(1)
Power on/power down
reset threshold
Falling edge(2)
Rising edge
1.80
1.88 1.96(3) V
1.84(3) 1.92 2.00
V
VPDRhyst PDR hysteresis
-
tRSTTEMPO(4) Reset temporization
-
-
40
-
mV
1.50 2.50 4.50 ms
1.
The PDR detector monitors
monitors only VDD.
VDD
and
also
VDDA
(if
kept
enabled
in
the
option
bytes).
The
POR
detector
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
3. Data based on characterization results, not tested in production.
4. Guaranteed by design, not tested in production.
Table 27. Programmable voltage detector characteristics
Symbol
Parameter
Conditions Min Typ Max Unit
VPVD0
PVD threshold 0
Rising edge
Falling edge
2.1 2.18 2.26 V
2
2.08 2.16
V
VPVD1
PVD threshold 1
Rising edge
2.19 2.28 2.37
V
Falling edge 2.09 2.18 2.27 V
VPVD2
PVD threshold 2
Rising edge
2.28 2.38 2.48
V
Falling edge 2.18 2.28 2.38 V
VPVD3
PVD threshold 3
Rising edge
2.38 2.48 2.58
V
Falling edge 2.28 2.38 2.48 V
VPVD4
PVD threshold 4
Rising edge
2.47 2.58 2.69
V
Falling edge 2.37 2.48 2.59 V
VPVD5
PVD threshold 5
Rising edge
2.57 2.68 2.79
V
Falling edge 2.47 2.58 2.69 V
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