STM32F302CBT6TR 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F302CBT6TR

ARM®-based Cortex®-M4 32b MCU+FPU, up to 256KB Flash+ 40KB SRAM, 2 ADCs, 1 DAC ch., 4 comp, 2 PGA, timers, 2.0-3.6 V

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Electrical characteristics

STM32F302xB STM32F302xC

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

Table 50. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

8/72 MHz

Unit

SEMI

Peak level

0.1 to 30 MHz

VDD = 3.6 V, TA = 25 °C,

LQFP100 package

30 to 130 MHz

compliant with IEC

61967-2

130 MHz to 1GHz

SAE EMI Level

7

20

dBµV

27

4

-

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114, ANSI/ESD STM5.3.1 standard.

Table 51. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

Electrostatic

VESD(HBM) discharge voltage

(human body model)

TA = +25 °C, conforming

to JESD22-A114

2

VESD(CDM)

Electrostatic

discharge voltage

(charge device model)

TA = +25 °C, conforming

to ANSI/ESD STM5.3.1

WLCSP100

package

Packages

except

3

4

WLCSP100

2000

250

V

500

1. Guaranteed by characterization results.

82/144

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