R5F10367DNA-U0 데이터 시트보기 (PDF) - Renesas Electronics

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R5F10367DNA-U0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)

(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock

output) (2/3)

(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

HS (high-speed main) Mode Unit

MIN.

MAX.

SIp setup time (to SCKp↑) tSIK1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

162

ns

Note

Cb = 30 pF, Rb = 1.4 kΩ

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

354

ns

Cb = 30 pF, Rb = 2.7 kΩ

2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,

958

ns

Cb = 30 pF, Rb = 5.5 kΩ

SIp hold time

tKSI1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

38

ns

(from SCKp↑) Note

Cb = 30 pF, Rb = 1.4 kΩ

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

38

ns

Cb = 30 pF, Rb = 2.7 kΩ

2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,

38

ns

Cb = 30 pF, Rb = 5.5 kΩ

Delay time from SCKp↓ to tKSO1

SOp output Note

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

Cb = 30 pF, Rb = 1.4 kΩ

200

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

Cb = 30 pF, Rb = 2.7 kΩ

390

ns

2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,

Cb = 30 pF, Rb = 5.5 kΩ

966

ns

Note When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.

(Cautions and Remarks are listed on the next page.)

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 86 of 106

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