STM32F100RCT6BTR 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F100RCT6BTR

High-density value line, advanced ARM-based 32-bit MCU with 256 to 512 KB Flash, 16 timers, ADC, DAC & 11 comm interfaces

STMicroelectronics 

Electrical characteristics

STM32F100xC, STM32F100xD, STM32F100xE

5.3.9

5.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 28. Flash memory characteristics

Symbol

Parameter

Conditions

Min(1) Typ Max(1) Unit

tprog 16-bit programming time

TA = –40 to +105 °C

40 52.5 70 µs

tERASE Page (2 KB) erase time

TA = –40 to +105 °C

20

40 ms

tME Mass erase time

TA = –40 to +105 °C

20

40 ms

Read mode

fHCLK = 24 MHz, VDD = 3.3 V

20 mA

IDD Supply current

Write / Erase modes

fHCLK = 24 MHz, VDD = 3.3 V

5 mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

50 µA

Vprog Programming voltage

2

3.6

V

1. Guaranteed by design, not tested in production.

Table 29. Flash memory endurance and data retention

Symbol Parameter

Conditions

Value

Min(1) Typ

NEND Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

10

1 kcycle(2) at TA = 85 °C

30

tRET Data retention 1 kcycle(2) at TA = 105 °C

10

10 kcycles(2) at TA = 55 °C

20

1. Based on characterization not tested in production.

2. Cycling performed over the whole temperature range.

Max

Unit

kcycles

Years

FSMC characteristics

Asynchronous waveforms and timings

Figure 15 through Figure 18 represent asynchronous waveforms and Table 30 through

Table 33 provide the corresponding timings. The results shown in these tables are obtained

with the following FSMC configuration:

● AddressSetupTime = 0

● AddressHoldTime = 1

● DataSetupTime = 1

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Doc ID 15081 Rev 7

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