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STM32L152CBH6DTR(2013) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32L152CBH6DTR Datasheet PDF : 121 Pages
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Electrical characteristics
STM32L151x6/8/B, STM32L152x6/8/B
6.3.8
Memory characteristics
The characteristics are given at TA = -40 to 105 °C unless otherwise specified.
RAM memory
Table 34. RAM and hardware registers
Symbol
Parameter
Conditions
Min Typ Max Unit
VRM Data retention mode(1) STOP mode (or RESET)
1.65
V
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
Flash memory and data EEPROM
Table 35. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Operating voltage
VDD Read / Write / Erase
1.65
tprog
Programming time for
word or half-page
Erasing
Programming
Average current during
whole programme/erase
operation
IDD Maximum current (peak) TA = 25 °C, VDD = 3.6 V
during programme/erase
operation
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
3.6
V
3.28 3.94
ms
3.28 3.94
300
µA
1.5 2.5 mA
74/121
Doc ID 17659 Rev 8

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