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STM32L152R6U6D(2013) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32L152R6U6D Datasheet PDF : 121 Pages
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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Table 57. DAC characteristics (continued)
Symbol
Parameter
Conditions
dOffset/dT(1)
Offset error temperature
coefficient (code 0x800)
VDDA = 3.3V
VREF+ = 3.0V
TA = 0 to 50 °C
DAC output buffer OFF
VDDA = 3.3V
VREF+ = 3.0V
TA = 0 to 50 °C
DAC output buffer ON
Gain(1)
Gain error(7)
CL 50 pF, RL 5 kΩ
DAC output buffer ON
No RLOAD, CL 50 pF
DAC output buffer OFF
dGain/dT(1)
Gain error temperature
coefficient
VDDA = 3.3V
VREF+ = 3.0V
TA = 0 to 50 °C
DAC output buffer OFF
VDDA = 3.3V
VREF+ = 3.0V
TA = 0 to 50 °C
DAC output buffer ON
TUE(1)
Total unadjusted error
CL 50 pF, RL 5 kΩ
DAC output buffer ON
No RLOAD, CL 50 pF
DAC output buffer OFF
tSETTLING
Settling time (full scale: for
a 12-bit code transition
between the lowest and
the highest input codes till
CL
50 pF, RL 5 kΩ
DAC_OUT reaches final
value ±1LSB
Update rate
Max frequency for a
correct DAC_OUT change
(95% of final value) with 1 CL 50 pF, RL 5 kΩ
LSB variation in the input
code
tWAKEUP
Wakeup time from off
state (setting the ENx bit
in the DAC Control
register)(8)
CL 50 pF, RL 5 kΩ
PSRR+
VDDA supply rejection ratio
(static DC measurement)
CL
50 pF, RL 5 kΩ
1. Data based on characterization results.
2. Connected between DAC_OUT and VSSA.
3. Difference between two consecutive codes - 1 LSB.
Min
Typ
-20
-10
0
20
Max
Unit
0
µV/°C
50
+0.1 / -0.2% +0.2 / -0.5%
%
+0 / -0.2% +0 / -0.4%
-10
-2
-40
-8
0
µV/°C
0
12
30
LSB
8
12
7
12
µs
1
Msps
9
15
µs
-60
-35
dB
Doc ID 17659 Rev 8
97/121

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