STM32L151VBH6 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STM32L151VBH6

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

STM32L151x6/8/B STM32L152x6/8/B

Electrical characteristics

6.3.7

Internal clock source characteristics

The parameters given in the following table are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 13.

High-speed internal (HSI) RC oscillator

Table 30. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min Typ Max Unit

fHSI

(1)(2)

TRIM

Frequency

HSI user-trimmed

resolution

Accuracy of the

ACCHSI(2) factory-calibrated

HSI oscillator

tSU(HSI)(2)

HSI oscillator

startup time

VDD = 3.0 V

-

Trimming code is not a multiple of 16 -

Trimming code is a multiple of 16

-

VDDA = 3.0 V, TA = 25 °C

-1(3)

VDDA = 3.0 V, TA = 0 to 55 °C

-1.5

VDDA = 3.0 V, TA = -10 to 70 °C

-2

VDDA = 3.0 V, TA = -10 to 85 °C

-2.5

VDDA = 3.0 V, TA = -10 to 105 °C

-4

VDDA = 1.65 V to 3.6 V

TA = -40 to 105 °C

-4

-

-

16

- MHz

± 0.4 0.7 %

- ± 1.5 %

-

1(3) %

- 1.5 %

-

2%

-

2%

-

2%

-

3%

3.7 6 µs

IDD(HSI)(2)

HSI oscillator

power consumption

-

- 100 140 µA

1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are

multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

2. Guaranteed by characterization results.

3. Tested in production.

Low-speed internal (LSI) RC oscillator

Table 31. LSI oscillator characteristics

Symbol

Parameter

Min

Typ

Max

fLSI(1)

LSI frequency

26

38

56

DLSI(2)

tsu(LSI)(3)

IDD(LSI)(3)

LSI oscillator frequency drift

0°C ≤TA ≤ 85°C

LSI oscillator startup time

LSI oscillator power consumption

-10

-

4

-

-

200

-

400

510

1. Tested in production.

2. This is a deviation for an individual part, once the initial frequency has been measured.

3. Guaranteed by design.

Unit

kHz

%

µs

nA

DocID17659 Rev 12

75/133

104

Share Link: