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STM32F301R8U7TR(2014) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F301R8U7TR Datasheet PDF : 132 Pages
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Electrical characteristics
STM32F301x6 STM32F301x8
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 46. Flash memory characteristics
Symbol
Parameter
Conditions
Min
tprog 16-bit programming time TA–40 to +105 °C
20
tERASE Page (2 KB) erase time TA –40 to +105 °C
20
tME Mass erase time
TA –40 to +105 °C
20
Write mode
-
IDD Supply current
Erase mode
-
1. Guaranteed by design, not tested in production.
Typ Max(1) Unit
-
40
μs
-
40 ms
-
40 ms
-
10 mA
-
12 mA
Table 47. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Min(1)
NEND Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
1 kcycle(2) at TA = 85 °C
30
tRET
Data retention
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
Unit
kcycles
Years
80/132
DocID025146 Rev 3

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