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PSD814F2A-12MIT 데이터 시트보기 (PDF) - STMicroelectronics

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PSD814F2A-12MIT Datasheet PDF : 128 Pages
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AC/DC parameters
PSD8XXFX
Table 59. WRITE timing (3 V devices) (continued)
Symbol
Parameter
Conditions
-12
-15
-20
Unit
Min Max Min Max Min Max
tAVPV
tWLMV
Address input valid to address output delay
WR valid to port output valid using
macrocell register Preset/Clear
(5)
(2)(6)
33
35
40 ns
70
70
80 ns
1. Any input used to select an internal PSD function.
2. WR has the same timing as E, LDS, UDS, WRL, and WRH signals.
3. tWHAX2 is the address hold time for DPLD inputs that are used to generate Sector Select signals for internal PSD memory.
4. Assuming WRITE is active before data becomes valid.
5. In multiplexed mode, latched address generated from ADIO delay to address output on any port.
t(s) 6. Assuming data is stable before active WRITE signal.
uc Table 60. Program, WRITE and Erase times (5 V devices)
rod Symbol
Parameter
Min.
Typ.
Max.
P Flash Program
te Flash Bulk Erase (pre-programmed)(1)
8.5
3
30
le Flash Bulk Erase (not pre-programmed)
5
so tWHQV3
Ob tWHQV2
t(s) - tWHQV1
Sector Erase (pre-programmed)
Sector Erase (not pre-programmed)
Byte Program
Program/Erase cycles (per sector)
1
2.2
14
100,000
30
1200
c tWHWLO
du tQ7VQV
Sector Erase timeout
DQ7 valid to output (DQ7-DQ0) valid (data polling)(2)
100
30
ro 1. The whole memory is programmed to 00h before erase.
P 2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Unit
s
s
s
s
s
µs
cycles
µs
ns
lete Table 61. Program, WRITE and Erase times (3 V devices)
so Symbol
Parameter
Min.
Ob Flash Program
Typ.
Max.
Unit
8.5
s
Flash Bulk Erase (pre-programmed)(1)
3
30
s
Flash Bulk Erase (not pre-programmed)
5
s
tWHQV3
tWHQV2
tWHQV1
Sector Erase (pre-programmed)
Sector Erase (not pre-programmed)
Byte Program
Program / Erase Cycles (per sector)
1
2.2
14
100,000
30
1200
s
s
µs
cycles
tWHWLO
tQ7VQV
Sector Erase timeout
DQ7 valid to Output (DQ7-DQ0) valid (data polling)(2)
100
µs
30
ns
110/128
Doc ID 7833 Rev 7

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