2N6134 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6134

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -1.4A

VBE(on) Base-Emitter On Voltage

IC= -7A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -2.5A ; VCE= -4V

hFE-2

DC Current Gain

IC= -7A ; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -4V

2N6134

MIN MAX UNIT

-80

V

-1.4

V

-3.0

V

-0.1 mA

-1.0 mA

-1.0 mA

20

100

5

2.5

MHz

SPTECH website：www.superic-tech.com

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