STM32WB55RYV7TR 데이터 시트보기 (PDF) - STMicroelectronics
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STM32WB55RYV7TR
STMicroelectronics
STM32WB55RYV7TR Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
6.3.17 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 72 are derived from tests
performed under the conditions summarized in Table 24: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.
Table 72. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I/O input
low level voltage(1)
VIL
I/O input
low level voltage(2)
I/O input
VIH
high level voltage(1)
I/O input
1.62 V < VDD < 3.6 V
high level voltage(2)
-
-
0.3 x VDD
0.7 x VDD
0.39 x VDD - 0.06
V
-
-
0.49 x VDD + 0.26 -
-
Vhys
Ilkg
TT_xx, FT_xxx
and NRST I/O
input hysteresis
0 ≤ VIN ≤ Max(VDDXXX)(3)
FT_xx
input leakage current
Max(VDDXXX)
Max(VDDXXX)
+≤1VVIN(2≤)(3)(4)
M5.5axV(V(2D)(D3)X(4X)X(5))(+61) V < VIN ≤
0 ≤ VIN ≤ Max(VDDXXX)(3)
FT_lu, FT_u and
PC3 IO
Max(VDDXXX)
Max(VDDXXX)
+≤1VVIN(2≤)(3)
input leakage current M5.5axV(V(1D)(D3)X(4X)X(8))+1 V < VIN ≤
TT_xx
VIN ≤ Max(VDDXXX)(3)
input leakage current M3.6axV(V(3D) DXXX) ≤ VIN <
-
200
-
mV
-
-
±100
-
-
650
-
-
200(7)
-
-
±150
nA
-
-
2500
-
-
250
-
-
±150
-
-
2000
RPU
Weak pull-up
equivalent resistor(1)
VIN = VSS
RPD
Weak pull-down
equivalent resistor(1)
VIN = VDD
25
40
55
kΩ
25
40
55
CIO I/O pin capacitance
-
-
5
-
pF
1. Tested in production.
2. Guaranteed by design, not tested in production.
3. Represents the pad leakage of the I/O itself. The total product pad leakage is given by
ITotal_Ileak_max = 10 μA + number of I/Os where VIN is applied on the pad x Ilkg(Max).
4. Max(VDDXXX) is the maximum value among all the I/O supplies.
5. VIN must be lower than [Max(VDDXXX) + 3.6 V].
6. Refer to Figure 27: I/O input characteristics.
134/193
DS11929 Rev 10
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