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STM32WB35RGQ6A 데이터 시트보기 (PDF) - STMicroelectronics

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STM32WB35RGQ6A Datasheet PDF : 193 Pages
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Electrical characteristics
STM32WB55xx STM32WB35xx
USB characteristics
The STM32WB55xx and STM32WB35xx USB interface is fully compliant with the USB
specification version 2.0, and is USB-IF certified (for Full-speed device operation).
Table 97. USB electrical characteristics(1)
Symbol
Parameter
Conditions
Min Typ Max Unit
VDDUSB USB transceiver operating voltage
-
3.0(2)
-
3.6 V
Tcrystal_less
USB crystal-less
operation temperature
-
-15
-
85 °C
RPUI
Embedded USB_DP pull-up value
during idle
-
900 1250 1600
RPUR
Embedded USB_DP pull-up value
during reception
-
1400 2300 3200
ZDRV(3) Output driver impedance(4)
Driving high and low 28 36 44
1. TA = -40 to 125 °C unless otherwise specified.
2. The STM32WB55xx and STM32WB35xx USB functionality is ensured down to 2.7 V, but the full USB
electrical characteristics are degraded in the 2.7 to 3.0 V voltage range.
3. Guaranteed by design.
4. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.
JTAG/SWD interface characteristics
Unless otherwise specified, the parameters given in Table 98 and Table 99 are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 24: General operating conditions, with the following
configuration:
Capacitive load C = 30 pF
Measurement points are done at CMOS levels: 0.5 VDD
Symbol
Table 98. JTAG characteristics
Parameter
Conditions
Min Typ Max Unit
1/tc(TCK) TCK clock frequency
tisu(TMS)
tih(TMS)
tisu(TDI)
tih(TDI)
TMS input setup time
TMS input hold time
TDI input setup time
TDI input hold time
tov(TDO) TDO output valid time
toh(TDO) TDO output hold time
2.7 < VDD < 3.6 V
1.65 < VDD < 3.6 V
-
-
-
-
2.7 < VDD < 3.6 V
1.65 < VDD < 3.6 V
-
-
-
29
MHz
-
-
21
2.5
-
-
2
-
-
1.5
-
-
2
-
-
ns
-
13.5 16.5
-
13.5 23
11
-
-
168/193
DS11929 Rev 10

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