PBSS5330PAS 데이터 시트보기 (PDF) - NXP Semiconductors.

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PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor

NXP Semiconductors. 

NXP Semiconductors

PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor

102

RCEsat

(Ω)

10

006aac042

1

10- 1

(1)

(3)

(2)

10- 2

- 10- 1

-1

- 10

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

- 102

- 103

- 104

IC (mA)

Fig. 14. Collector-emitter saturation resistance as a

function of collector current; typical values

103

RCEsat

(Ω)

102

006aac043

10

(1)

1

(2)

(3)

10- 1

10- 2

- 10- 1

-1

- 10

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 10

- 102

- 103

- 104

IC (mA)

Fig. 15. Collector-emitter saturation resistance as a

function of collector current; typical values

PBSS5330PAS

Product data sheet

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11 September 2014

© NXP Semiconductors N.V. 2014. All rights reserved

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