D12NF06(2007) 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

D12NF06
(Rev.:2007)

N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD12NF06 - STD12NF06-1

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VDGR Drain-gate voltage (RGS = 20KΩ)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

ID Drain current (continuous) at TC=100°C

IDM (1) Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (2) Peak diode recovery voltage slope

EAS (3) Single pulse avalanche energy

Tstg Storage temperature

TJ Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD ≤12A, di/dt ≤200A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX

3. Starting TJ = 25 oC, ID = 6A, VDD = 30V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

60

60

± 20

12

8.5

48

30

0.2

15

140

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Value

5

100

275

Unit

°C/W

°C/W

°C

3/14

Share Link: