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VNP35N07-E 데이터 시트보기 (PDF) - STMicroelectronics

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VNP35N07-E
ST-Microelectronics
STMicroelectronics 
VNP35N07-E Datasheet PDF : 24 Pages
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Electrical specification
2
Electrical specification
VNP35N07-E, VNB35N07-E, VNV35N07-E
2.1
Absolute maximum rating
Stressing the device above the rating listed in Table 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions in table below for extended periods may affect device reliability.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D2PAK
PowerSO-10
TO-220
Unit
VDS Drain-source voltage (Vin = 0)
Internally clamped
V
Vin Input voltage
18
V
ID Drain current
Internally limited
A
IR Reverse DC output current
-50
A
Vesd Electrostatic Discharge (C = 100 pF; R = 1.5 KΩ)
2000
V
Ptot Total dissipation at TC = 25°C
125
40
W
Tj Operating junction temperature
Internally limited
°C
Tc Case operating temperature
Internally limited
°C
Tstg Storage temperature
-55 to 150
°C
2.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
Value
Unit
PowerSO-10 D2PAK TO-220
Rthj-case Thermal Resistance Junction-case (max)
1
Rthj-amb Thermal Resistance Junction-ambient (max)
50
1
3.12 °C/W
62.5
62.5 °C/W
6/24
DocID023779 Rev 3

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