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G10S1C-DC6
데이터시트
일치하는
G10S1C-DC6
(1)
시작하는
N/A
끝나는
N/A
포함하는
N/A
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G10S1C-DC6
Large switching capacity
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G10
S1C-DC6
Shenzhen Taychipst Electronic Co., Ltd
G10
0
Silicon Z–Diodes
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Unspecified
G10
3
GaAlAs (880 nm peak) Photodiode
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New Jersey Semiconductor
G10
5
SIDACs
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Electronics Industry
G10
5
SIDACs
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New Jersey Semiconductor
G10
5C
SIDACs
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XP Power Limited
G10
CT
ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS
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Powerbox
G10
CT
1.5-10 WATTS SINGLE OUTPUT DC/DC INDUSTRIAL
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Electronics Industry
G10
5C
SIDACs
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Infineon Technologies
G10
T60
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
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Intersil
G10
N40
10A, 400V and 500V N-Channel IGBTs
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Infineon Technologies
G10
T60
_
2009
Low Loss IGBT in TrenchStop® and Fieldstop technology
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Intersil
G10
N50
10A, 400V and 500V N-Channel IGBTs
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Infineon Technologies
G10
T60
_
2007
Low Loss IGBT in TrenchStop® and Fieldstop technology
보기
Infineon Technologies
G10
T60
_
2006
Low Loss IGBT in TrenchStop® and Fieldstop technology
보기
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
G10
03A
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge
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