STM32F103T8U7TR Просмотр технического описания (PDF) - STMicroelectronics
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STM32F103T8U7TR
STMicroelectronics
STM32F103T8U7TR Datasheet PDF : 123 Pages
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Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
Table 9. Thermal characteristics
Symbol
Ratings
TSTG
TJ
Storage temperature range
Maximum junction temperature
Value
Unit
–65 to +150
°C
150
°C
5.3
5.3.1
Operating conditions
General operating conditions
Table 10. General operating conditions
Symbol
Parameter
Conditions
Min Max Unit
fHCLK Internal AHB clock frequency
0
72
fPCLK1 Internal APB1 clock frequency
0
36 MHz
fPCLK2 Internal APB2 clock frequency
0
72
VDD
Standard operating voltage
2
3.6
V
VDDA(1)
Analog operating voltage
(ADC not used)
Analog operating voltage
(ADC used)
2
3.6
Must be the same potential
as VDD(2)
2.4 3.6
V
VBAT Backup operating voltage
LQFP144
1.8 3.6
V
666
Power dissipation at TA =
PD
85 °C for suffix 6 or TA =
105 °C for suffix 7(3)
LQFP100
LQFP64
LFBGA100
434
444 mW
500
LFBGA144
500
Ambient temperature for 6
suffix version
Maximum power dissipation –40 85
Low power dissipation(4)
–40 105
°C
TA
Ambient temperature for 7
suffix version
Maximum power dissipation –40 105
Low power dissipation(4)
–40 125
°C
6 suffix version
TJ
Junction temperature range
7 suffix version
–40 105
°C
–40 125
1. When the ADC is used, refer to Table 58: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 114).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 114).
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Doc ID 14611 Rev 7
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