STM8AP628ATAX Просмотр технического описания (PDF) - STMicroelectronics

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STM8AP628ATAX

Automotive 8-bit MCU, with up to 128 Kbyte Flash, data EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 to 5.5 V

STMicroelectronics 

Electrical characteristics

STM8AF526x/8x/Ax STM8AF6269/8x/Ax

10.3.5

Memory characteristics

Flash program memory/data EEPROM memory

General conditions: TA = -40 °C to 150 °C.

Symbol

Table 35. Flash program memory/data EEPROM memory

Parameter

Conditions

Min(1) Typ Max Unit

fCPU is 16 to 24 MHz

VDD

Operating voltage

(all modes, execution/write/erase)

with 1 ws

fCPU is 0 to 16 MHz

3.0

-

5.5

with 0 ws

V

fCPU is 16 to 24 MHz

VDD Operating voltage (code execution)

with 1 ws

fCPU is 0 to 16 MHz

2.6

-

5.5

with 0 ws

Standard programming time (including

erase) for byte/word/block

-

tprog (1 byte/4 bytes/128 bytes)

Fast programming time for 1 block

(128 bytes)

-

-

6 6.6

ms

-

3 3.3

terase Erase time for 1 block (128 bytes)

-

-

3 3.3

1. Guaranteed by characterization results, not tested in production.

Table 36. Flash program memory

Symbol

Parameter

Condition

Min

Max

Unit

TWE

NWE

Temperature for writing and erasing

Flash program memory endurance

(erase/write cycles)(1)

-

TA = 25 °C

-40

1000

150

°C

-

cycles

tRET Data retention time

TA = 25 °C

40

TA = 55 °C

20

-

years

-

1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a

write/erase operation addresses a single byte.

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