DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F091VB Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
STM32F091VB Datasheet PDF : 128 Pages
First Prev 71 72 73 74 75 76 77 78 79 80 Next Last
Electrical characteristics
STM32F091xB STM32F091xC
Table 53. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Weak pull-up
RPU
equivalent resistor
(3)
VIN = VSS
25
40
Max
Unit
55
k
Weak pull-down
RPD
equivalent
resistor(3)
VIN = - VDDIOx
25
40
55
k
CIO I/O pin capacitance
-
-
5
-
pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 52:
I/O current injection susceptibility.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 22 for standard I/Os, and in Figure 23 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
80/128
DocID026284 Rev 4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]