STM32L151VBH6 Просмотр технического описания (PDF) - STMicroelectronics
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STM32L151VBH6
STMicroelectronics
STM32L151VBH6 Datasheet PDF : 133 Pages
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STM32L151x6/8/B STM32L152x6/8/B
Electrical characteristics
Table 12. Thermal characteristics
Symbol
Ratings
Value
Unit
TSTG
TJ
Storage temperature range
Maximum junction temperature
–65 to +150
°C
150
°C
6.3
Operating conditions
6.3.1
General operating conditions
Table 13. General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
fPCLK1
fPCLK2
Internal AHB clock frequency
Internal APB1 clock frequency
Internal APB2 clock frequency
VDD
Standard operating voltage
-
0
-
0
-
0
BOR detector disabled
1.65
BOR detector enabled,
at power on
1.8
BOR detector disabled, after
power on
1.65
32
32
MHz
32
3.6
3.6
V
3.6
VDDA(1)
VIN
PD
TA
Analog operating voltage
(ADC and DAC not used)
Analog operating voltage
(ADC or DAC used)
Input voltage on FT pins(3)
Input voltage on BOOT0 pin
Input voltage on any other pin
Power dissipation at
TA = 85 °C(4)
Temperature range
Must be the same voltage as
VDD(2)
2.0 V ≤VDD ≤ 3.6 V
1.65 V ≤ VDD ≤ 2.0 V
BGA100 package
Maximum power dissipation
Low power dissipation(5)
1.65
3.6
V
1.8
3.6
–0.3
5.5
–0.3
5.25
0
5.5
V
–0.3 VDD+0.3
-
339
mW
–40
85
°C
–40
105
TJ
Junction temperature range
-40 °C ≤TA ≤105°C
–40
105
°C
1. When the ADC is used, refer to Table 54: ADC characteristics.
2. VIt DisDAreccaonmbmeetnodleerdatteodpdouwreinrgVpDoDwaenrd-uVpDaDnAdforopmerathtieons.ame source. A maximum difference of 300 mV between VDD and
3. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. oIfnTApaisgelo5w3e)r., higher PD values are allowed as long as TJ does not exceed TJ max (see Table 12: Thermal characteristics
5. TInhleorwmpaol cwhearradcistseirpisattiicosnosntaptea,gTeA5c3a).n be extended to this range as long as TJ does not exceed TJ max (see Table 12:
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