EMIF01-10005W5 Просмотр технического описания (PDF) - STMicroelectronics
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EMIF01-10005W5 Datasheet PDF : 10 Pages
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EMIF01-10005W5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Symbol
Parameter and test conditions
VPP ESD discharge IEC1000-4-2, air discharge
ESD discharge IEC1000-4-2, contact discharge
Tj
Junction temperature
Top
Operating temperature range
Tstg Storage temperature range
TL
Lead solder temperature (10 second duration)
Value
Unit
16
kV
9
150
°C
-40 to + 85
°C
-55 to +150
°C
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
VBR
IRM
VRM
VCL
Rd
Parameter
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic impedance
I
VCL VBR VRM
IRM
V
IR
IPP
Peak pulse current
RI/O Series resistance between Input
and Output
slope : 1 / R d
IPP
CIN
Input capacitance per line
Symbol
Test conditions
Min. Typ. Max.
VBR
IR = 1 mA
6
7
8
IRM
VRM = 3V
1
RI/O
80
100 120
Rd
Ipp = 10 A, tp = 2.5 µs (see note 1)
1
CIN
at 0V bias
50
Note 1 : to calculate the ESD residual voltage, please refer to the paragraph "ESD PROTECTION" on pages 4 & 5
Unit
V
µA
Ω
Ω
pF
2/10
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