STP60NF06FP(2007) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

STP60NF06FP
(Rev.:2007)

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

STMicroelectronics 

STP60NF06FP

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 60A, VGS = 0

ISD = 60A, VDD=25V di/dt =

100A/µs,

Tj = 150°C

(see Figure 13)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min Typ. Max Unit

30 A

120 A

1.3 V

75

ns

182

nC

5

A

5/12

Share Link: