STP12PF06 查看數據表（PDF） - STMicroelectronics
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STP12PF06 Datasheet PDF : 10 Pages
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STP12PF06 STF12PF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 6 A
20
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
40
ns
(Resistive Load, Figure 19)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 48 V ID= 12 A VGS= 10 V
16
21
nC
4
nC
6
nC
Table 9: SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 6 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 19)
Min.
Typ. Max. Unit
40
ns
10
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (1)
Source-drain Current
Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 12 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 21)
(1 )Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
100
260
5.2
Max.
10
40
2.5
Unit
A
A
V
ns
nC
A
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
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