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ST6220CD3/HWD 查看數據表(PDF) - STMicroelectronics

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ST6220CD3/HWD Datasheet PDF : 105 Pages
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ST6208C/ST6209C/ST6210C/ST6220C
11.8 I/O PORT PIN CHARACTERISTICS
11.8.1 General Characteristics
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ 1)
Max
Unit
VIL
Input low level voltage 2)
VIH Input high level voltage 2)
0.7xVDD
0.3xVDD
V
Vhys
Schmitt trigger voltage hysteresis 3) VDD=5V
VDD=3.3V
200
400
mV
200
400
IL
Input leakage current
VSSVINVDD
(no pull-up configured)
0.1
1
µA
RPU
Weak pull-up equivalent resistor 4) VIN=VSS
VDD=5V
VDD=3.3V
40
80
110
230
350
700
k
CIN I/O input pin capacitance
5
10
pF
COUT I/O output pin capacitance
5
10
pF
tf(IO)out Output high to low level fall time 5) CL=50pF
30
tr(IO)out Output low to high level rise time 5) Between 10% and 90%
35
ns
tw(IT)in External interrupt pulse time 6)
1
tCPU
Figure 61. Typical RPU vs. VDD with VIN = VSS
Rpu [Khom]
350
Ta=-40°C
300
Ta=25°C
250
Ta=95°C
Ta=125°C
200
150
100
50
3
4
5
6
VDD [V]
Notes:
1. Unless otherwise specified, typical data are based on TA=25°C and VDD=5V.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The RPU pull-up equivalent resistor is based on a resistive transistor. This data is based on characterization results,
not tested in production.
5. Data based on characterization results, not tested in production.
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
Figure 62. Two typical Applications with unused I/O Pin
VDD
10k
ST62XX
UNUSED I/O PORT
10k
UNUSED I/O PORT
ST62XX
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