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STPR2420 查看數據表(PDF) - STMicroelectronics

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STPR2420
ST-Microelectronics
STMicroelectronics 
STPR2420 Datasheet PDF : 5 Pages
1 2 3 4 5
STPR2420CT
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case
Per diode
Total
Rth(c)
Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Value
2.5
1.4
0.23
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
) Symbol
Parameters
Test conditions
t(s IR *
Reverse leakage current
Tj = 25°C VR = VRRM
uc Tj = 100°C
Prod t(s) VF ** Forward voltage drop
Tj = 125°C
Tj = 125°C
IF = 12 A
IF = 24 A
te c Tj = 25°C IF = 24 A
le du Pulse test : * tp = 5 ms, δ < 2 %
so ro ** tp = 380 µs, δ < 2 %
b P To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.0175 x IF2(RMS)
) - O lete RECOVERY CHARACTERISTICS
t(s so Symbol
uc Ob trr
rod ) - tfr
OObbssoolleettee PProduct(s VFP
Tj = 25°C
Tj = 25°C
Tj = 25°C
Test conditions
IF = 0.5A Irr = 0.25A IR = 1A
IF = 1A tr = 10 ns VFR = 1.1 x VF
IF = 1A tr = 10 ns
Min. Typ. Max. Unit
50 µA
0.8 mA
0.99 V
1.20
1.25
Min. Typ. Max. Unit
30 ns
20
3
V
2/5

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