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STM32F103VC 查看數據表(PDF) - STMicroelectronics

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STM32F103VC Datasheet PDF : 123 Pages
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STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Figure 41. NAND controller waveforms for common memory write access
FSMC_NCEx Low
ALE (FSMC_A17)
CLE (FSMC_A16)
td(ALE-NOE)
FSMC_NWE
tw(NWE)
th(NOE-ALE)
FSMC_NOE
FSMC_D[15:0]
td(D-NWE)
tv(NWE-D)
th(NWE-D)
ai14913b
Table 40. Switching characteristics for NAND Flash read and write cycles(1)
Symbol
Parameter
Min
Max
Unit
td(D-NWE)(2)
tw(NOE)(2)
FSMC_D[15:0] valid before FSMC_NWE high
FSMC_NOE low width
6THCLK + 12
ns
4THCLK – 1.5 4THCLK + 1.5 ns
tsu(D-NOE)(2)
FSMC_D[15:0] valid data before FSMC_NOE
high
25
ns
th(NOE-D)(2) FSMC_D[15:0] valid data after FSMC_NOE high 7
ns
tw(NWE)(2)
FSMC_NWE low width
4THCLK – 1 4THCLK + 2.5 ns
tv(NWE-D)(2) FSMC_NWE low to FSMC_D[15:0] valid
0
ns
th(NWE-D)(2) FSMC_NWE high to FSMC_D[15:0] invalid
10THCLK + 4
ns
td(ALE-NWE)(3) FSMC_ALE valid before FSMC_NWE low
3THCLK + 1.5 ns
th(NWE-ALE)(3) FSMC_NWE high to FSMC_ALE invalid
3THCLK + 4.5
ns
td(ALE-NOE)(3) FSMC_ALE valid before FSMC_NOE low
3THCLK + 2 ns
th(NOE-ALE)(3) FSMC_NWE high to FSMC_ALE invalid
3THCLK + 4.5
ns
1. CL = 15 pF.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Doc ID 14611 Rev 7
79/123

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