STPS340 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STPS340 Datasheet PDF : 11 Pages
| |||
Characteristics
1
Characteristics
STPS340
Table 1.
Symbol
Absolute Ratings (limiting values)
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
DPAK
Tc = 135° C δ = 0.5 DPAK
IF(AV) Average forward current TL = 105° C δ = 0.5 SMB/SMC
TL = 115° C δ = 0.5 SMB flat
IFSM Surge non repetitive forward current tp =10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
Tstg Storage temperature range
Tj Operating junction temperature (1)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 2. Thermal resistance
Symbol
Parameter
40
V
6
A
3
A
75
A
1300
W
-65 to + 150 °C
150
°C
Value
Unit
Rth(j-l) Junction to lead
Rth(j-c) Junction to case
SMB
SMB flat
SMC
DPAK
25
15
°C/W
20
5.5
°C/W
Table 3.
Symbol
Static electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(1) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
IF = 3 A
IF = 6 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.050 IF2(RMS)
20 µA
2
10 mA
0.63
0.52 0.57
V
0.84
0.63 0.72
2/11
Share Link: 