FM150 查看數據表（PDF） - GHz Technology
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FM150 Datasheet PDF : 2 Pages
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FM 150
150 Watts, 28 Volts
Broadcast 88 - 108 MHz
GENERAL DESCRIPTION
The FM 150 is a high power COMMON EMITTER bipolar transistor. It is
designed for FM systems in the frequency band 88-108 MHz. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF.
Surface passivation eliminates contamination and extends life. Low thermal
resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
165 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
55 Volts
4.0 Volts
16 Amps
- 65 to + 150oC
+ 150oC
CASE OUTLINE
55HT, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 88-108 MHz
Vcc = 28 Volts
F = 108 MHz
MIN TYP MAX UNITS
150
Watts
19 Watts
9.0
10
dB
65
%
3:1
BVebo
BVceo
BVcbo
Cob
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Note 1: Tc= + 25oC unless otherwise specified
Ie = 20 mA
Ic = 100 mA
Ic = 100Ma
Vcb = 28V
Ic = 1A, Vce=5V
4.0
Volts
25
Volts
60
140
pF
20
1.06 oC/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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