LH28F800BGE-BL12 查看數據表（PDF） - Sharp Electronics
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LH28F800BGE-BL12 Datasheet PDF : 43 Pages
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LH28F800BG-L/BGH-L (FOR TSOP, CSP)
6.2.3 DC CHARACTERISTICS
SYMBOL
PARAMETER
ILI Input Load Current
ILO Output Leakage Current
NOTE VCC = 2.7 to 3.6 V
TYP. MAX.
1
±0.5
1
±0.5
ICCS VCC Standby Current
25
50
1, 3, 6
0.2
2
ICCD VCC Deep Power- LH28F800BG-L
1
4
10
Down Current LH28F800BGH-L
4
20
ICCR VCC Read Current
15
25
1, 5, 6
30
5
17
ICCW VCC Word Write Current
1, 7 5
17
5
12
4
17
ICCE VCC Block Erase Current
1, 7 4
17
4
12
ICCWS VCC Word Write or Block
1, 2 1
6
ICCES Erase Suspend Current
IPPS VPP Standby or Read Current 1
IPPR
±2
±15
10
200
VPP Deep Power-Down
IPPD Current
1
0.1
5
12
40
IPPW VPP Word Write Current
1, 7
40
30
8
25
IPPE VPP Block Erase Current
1, 7
25
20
IPPWS VPP Word Write or Block
IPPES Erase Suspend Current
1
10
200
VCC = 5.0±0.5 V UNIT
TYP. MAX.
TEST
CONDITIONS
VCC = VCC Max.
±1 µA
VIN = VCC or GND
VCC = VCC Max.
±10 µA
VOUT = VCC or GND
CMOS Inputs
30
100 µA VCC = VCC Max.
CE# = RP# = VCC±0.2 V
TTL Inputs
0.4
2 mA VCC = VCC Max.
CE# = RP# = VIH
10
RP# = GND±0.2 V
µA
20
IOUT (RY/BY#) = 0 mA
CMOS Inputs
VCC = VCC Max.
50 mA CE# = GND
f = 5 MHz (3.3 V, 2.7 V),
8 MHz (5 V)
IOUT = 0 mA
TTL Inputs
VCC = VCC Max.
65 mA CE# = GND
f = 5 MHz (3.3 V, 2.7 V),
8 MHz (5 V)
IOUT = 0 mA
—
— mA VPP = 2.7 to 3.6 V
35 mA VPP = 5.0±0.5 V
30 mA VPP = 12.0±0.6 V
—
— mA VPP = 2.7 to 3.6 V
30 mA VPP = 5.0±0.5 V
25 mA VPP = 12.0±0.6 V
1
10 mA CE# = VIH
±2
±15 µA VPP ≤ VCC
10
200 µA VPP > VCC
0.1
5 µA RP# = GND±0.2 V
—
— mA VPP = 2.7 to 3.6 V
40 mA VPP = 5.0±0.5 V
30 mA VPP = 12.0±0.6 V
—
— mA VPP = 2.7 to 3.6 V
25 mA VPP = 5.0±0.5 V
20 mA VPP = 12.0±0.6 V
10
200 µA VPP = VPPH1/2/3
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