PHP160NQ08T 查看數據表（PDF） - NXP Semiconductors.

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PHP160NQ08T

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

PHP160NQ08T

N-channel TrenchMOS standard level FET

120

Ider

(%)

80

03ap65

120

Pder

(%)

80

03aa16

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

103

ID

(A)

Limit RDSon = VDS/ID

102

DC

10

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

03ap67

tp = 10 μs

1 ms

10 ms

100 ms

1s

1

1

10

102

103

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PHP160NQ08T_2

Product data sheet

Rev. 02 — 10 March 2009

© NXP B.V. 2009. All rights reserved.

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