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STM32F205RG 查看數據表(PDF) - STMicroelectronics

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STM32F205RG Datasheet PDF : 177 Pages
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Revision history
STM32F20xxx
Table 94. Document revision history (continued)
Date
Revision
Changes
22-Apr-2011
Updated Typical and maximum current consumption conditions, as
well as Table 18: Typical and maximum current consumption in Run
mode, code with data processing running from Flash memory (ART
accelerator disabled) and Table 19: Typical and maximum current
consumption in Run mode, code with data processing running from
Flash memory (ART accelerator enabled) or RAM. Added Figure 21,
Figure 22, Figure 23, and Figure 24.
Updated Table 20: Typical and maximum current consumption in Sleep
mode, and added Figure 25 and Figure 26.
Updated Table 21: Typical and maximum current consumptions in Stop
mode. Added Figure 27: Typical current consumption vs temperature
in Stop mode.
Updated Table 22: Typical and maximum current consumptions in
Standby mode and Table 23: Typical and maximum current
consumptions in VBAT mode.
Updated On-chip peripheral current consumption conditions and
Table 24: Peripheral current consumption.
Updated tWUSTDBY and tWUSTOP, and added Note 3 in Table 25: Low-
power mode wakeup timings.
Maximum fHSE_ext and minimum tw(HSE) values updated in Table 26:
High-speed external user clock characteristics.
Updated C and gm in Table 28: HSE 4-26 MHz oscillator
characteristics. Updated RF, I2, gm, and tsu(LSE) in Table 29: LSE
oscillator characteristics (fLSE = 32.768 kHz).
6
Added Note 1 and updated ACCHSI, IDD(HSI, and tsu(HSI) in Table 30:
(continued) HSI oscillator characteristics. Added Figure 32: ACCHSI versus
temperature.
Updated fLSI, tsu(LSI) and IDD(LSI) in Table 31: LSI oscillator
characteristics. Added Figure 33: ACCLSI versus temperature
Table 32: Main PLL characteristics: removed note 1, updated tLOCK,
jitter, IDD(PLL) and IDDA(PLL), added Note 2 for fPLL_IN minimum and
maximum values.
Table 33: PLLI2S (audio PLL) characteristics: removed note 1, updated
tLOCK, jitter, IDD(PLLI2S) and IDDA(PLLI2S), added Note 2 for fPLLI2S_IN
minimum and maximum values.
Added Note 1 in Table 34: SSCG parameters constraint.
Updated Table 35: Flash memory characteristics. Modified Table 36:
Flash memory programming and added Note 2 for tprog. Updated tprog
and added Note 1 in Table 37: Flash memory programming with VPP.
Modified Figure 37: Recommended NRST pin protection.
Updated Table 40: EMI characteristics and EMI monitoring conditions
in Section : Electromagnetic Interference (EMI). Added Note 2 related
to VESD(HBM)in Table 41: ESD absolute maximum ratings.
Updated Table 44: I/O static characteristics.
Added Section 5.3.15: I/O current injection characteristics.
Modified maximum frequency values and conditions in Table 46: I/O
AC characteristics.
Updated tres(TIM) in Table 48: Characteristics of TIMx connected to the
APB1 domain. Modified tres(TIM) and fEXT Table 49: Characteristics of
TIMx connected to the APB2 domain.
170/177
Doc ID 15818 Rev 9

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