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STM32F205VE 查看數據表(PDF) - STMicroelectronics

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STM32F205VE Datasheet PDF : 177 Pages
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STM32F20xxx
Electrical characteristics
5.3.9
Internal clock source characteristics
The parameters given in Table 30 and Table 31 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 12.
High-speed internal (HSI) RC oscillator
Table 30. HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min Typ Max Unit
fHSI Frequency
-
16
- MHz
User-trimmed with the RCC_CR
register(2)
-
-
1
%
ACCHSI
Accuracy of the HSI
oscillator
Factory-
calibrated
TA = –40 to 105 °C –8
TA = –10 to 85 °C
–4
-
-
4.5 %
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)(3)
HSI oscillator
startup time
-
2.2 4
µs
IDD(HSI)
HSI oscillator
power consumption
-
60 80 µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
3. Guaranteed by design, not tested in production.
Figure 32. ACCHSI versus temperature
max
6
avg
min
4
2
0
-2
-4
-6
-8
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125
Temperature (°C)
MS19012V2
Doc ID 15818 Rev 9
85/177

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