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STM32F405RET7TR 查看數據表(PDF) - STMicroelectronics

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STM32F405RET7TR Datasheet PDF : 185 Pages
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STM32F405xx, STM32F407xx
Electrical characteristics
Table 77. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) (continued)
tv(NADV_NE)
tw(NADV)
th(AD_NADV)
FSMC_NEx low to FSMC_NADV low
FSMC_NADV low time
FSMC_AD(adress) valid hold time after
FSMC_NADV high)
1
2
ns
THCLK– 2
THCLK+1
ns
THCLK
-
ns
th(A_NOE) Address hold time after FSMC_NOE high
THCLK–1
-
ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high
0
-
ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid
-
2
ns
tsu(Data_NE) Data to FSMC_NEx high setup time
THCLK+4
-
ns
tsu(Data_NOE) Data to FSMC_NOE high setup time
THCLK+4
-
ns
th(Data_NE) Data hold time after FSMC_NEx high
0
-
ns
th(Data_NOE) Data hold time after FSMC_NOE high
0
-
ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Figure 58. Asynchronous multiplexed PSRAM/NOR write waveforms
tw(NE)
FSMC_NEx
FSMC_NOE
tv(NWE_NE)
tw(NWE)
t h(NE_NWE)
FSMC_NWE
FSMC_A[25:16]
FSMC_NBL[1:0]
FSMC_AD[15:0]
tv(A_NE)
tv(BL_NE)
t v(A_NE)
Address
t v(NADV_NE)
tw(NADV)
th(A_NWE)
Address
th(BL_NWE)
NBL
t v(Data_NADV)
Data
th(AD_NADV)
th(Data_NWE)
FSMC_NADV
ai14891B
Table 78. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
Symbol
Parameter
Min
Max
Unit
tw(NE)
tv(NWE_NE)
tw(NWE)
FSMC_NE low time
FSMC_NEx low to FSMC_NWE low
FSMC_NWE low tim e
4THCLK–0.5 4THCLK+3 ns
THCLK–0.5 THCLK -0.5 ns
2THCLK–0.5 2THCLK+3
ns
DocID022152 Rev 4
141/185

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